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GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement-Mode l High Speed l Low Saturation Voltage : tf = 0.20 s (TYP.) (IC = 15 A) : VCE (sat) = 1.8V (TYP.) (IC = 15A) Unit: mm
MAXIMUM RATINGS (Ta=25C)
CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Foward Current Collector Power Dissipation (Tc = 25C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 900 25 15 30 15 120 55 150 -55~150 UNIT V V A
A W C C
JEDEC JEITA TOSHIBA Weight: 5.8 g
2-16F1A
EQUIVALENT CIRCUIT
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ELECTRICAL CHARACTERISTICS (Ta=25C)
CHARACTERISTIC Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance SYMBOL IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IEC = 15 A, VGE = 0 IF = 15 A, VGE = 0 di / dt = -20 A / s IGBT Diode TEST CONDITION VGE = 25 V, VCE = 0 VCE = 900 V, VGE = 0 IC = 15 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz MIN 3.0 TYP. 1.8 1200 0.20 0.30 0.20 0.50 1.5 0.7 MAX 500 1.0 6.0 2.5 0.40 2.0 2.5 2.27 2.27 V ms C / W C / W s UNIT nA mA V V pF
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RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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